User manual JBL UREI BX63

[. . . ] Sourced from Process 55. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value 25 - 25 10 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. [. . . ] Sourced from Process 55. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value 25 - 25 10 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5457-5459 625 5. 0 125 357 Max *MMBF5457-5459 350 2. 8 556 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1. 6" X 1. 6" X 0. 06. " 1997 Fairchild Semiconductor Corporation 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 N-Channel General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = 10 µA, VDS = 0 VGS = -15 V, VDS = 0 VGS = -15 V, VDS = 0, TA = 100°C 5457 VDS = 15 V, ID = 10 nA 5458 5459 VDS = 15 V, ID = 100 µA 5457 VDS = 15 V, ID = 200 µA 5458 VDS = 15 V, ID = 400 µA 5459 - 25 - 1. 0 - 200 - 6. 0 - 7. 0 - 8. 0 - 2. 5 - 3. 5 - 4. 5 V nA nA V V V V V V - 0. 5 - 1. 0 - 2. 0 VGS Gate-Source Voltage ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 5457 5458 5459 1. 0 2. 0 4. 0 3. 0 6. 0 9. 0 5. 0 9. 0 16 mA mA mA SMALL SIGNAL CHARACTERISTICS gfs Forward Transfer Conductance* VDS = 15 V, VGS = 0, f = 1. 0 kHz 5457 5458 5459 VDS = 15 V, VGS = 0, f = 1. 0 kHz VDS = 15 V, VGS = 0, f = 1. 0 MHz VDS = 15 V, VGS = 0, f = 1. 0 MHz VDS = 15 V, VGS = 0, f = 1. 0 kHz, RG = 1. 0 megohm, BW = 1. 0 Hz 1000 1500 2000 10 4. 5 1. 5 5000 5500 6000 50 7. 0 3. 0 3. 0 µmhos µmhos µmhos µmhos pF pF dB gos Ciss Crss NF Output Conductance* Input Capacitance Reverse Transfer Capacitance Noise Figure *Pulse Test: Pulse Width 300 ms, Duty Cycle 2% 5 Typical Characteristics Transfer Characteristics Transfer Characteristics 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 N-Channel General Purpose Amplifier (continued) Typical Characteristics (continued) Transfer Characteristics Transfer Characteristics Common Drain-Source Parameter Interaction Output Conductance vs. Drain Current 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 N-Channel General Purpose Amplifier (continued) Typical Characteristics (continued) Channel Resistance vs. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. [. . . ] Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. [. . . ]